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1 CGH25120F 120 w, 2300-2700 mhz, gan hemt for wimax and lte crees CGH25120F is a gallium nitride (gan) high electron mobility transistor (hemt) designed specifcally for high effciency, high gain and wide bandwidth capabilities, which makes the CGH25120F ideal for 2.3-2.7ghz wimax, lte and bwa amplifer applications. the transistor is supplied in a ceramic/metal fange package. package type: 440162 pn: CGH25120F re v 3.1 - june 2015 features ? 2.3 - 2.7 ghz operation ? 13 db gain ? -32 dbc aclr at 20 w p ave ? 30 % effciency at 20 w p ave ? high degree of dpd correction can be applied typical performance over 2.3-2.7ghz (t c = 25?c) of demonstration amplifer parameter 2.3 ghz 2.4 ghz 2.5 ghz 2.6 ghz 2.7 ghz units gain @ 43 dbm 12.5 12.8 13.1 13.5 13.6 db aclr @ 43 dbm -32.7 -34.0 -32.5 -29.5 -25.8 dbc drain effciency @ 43 dbm 26.5 28.0 30.0 32.5 34.5 % note: measured in the CGH25120F-amp amplifer circuit, under equivalent 802.16e wimax signal, 10 mhz bandwidth, par = 9.6 db @ 0.01 % probability on ccdf. subject to change without notice. www.cree.com/wireless
2 absolute maximum ratings (not simultaneous) at 25?c case temperature parameter symbol rating units units drain-source voltage v dss 84 volts 25?c gate-to-source voltage v gs -10, +2 volts 25?c power dissipation p diss 56 watts storage temperature t stg -65, +150 ?c operating junction temperature t j 225 ?c maximum forward gate current i gmax 30 ma 25?c maximum drain current 1 i dmax 12 a 25?c soldering temperature 2 t s 245 ?c screw torque 80 in-oz thermal resistance, junction to case 3 r jc 1.5 ?c/w 85?c case operating temperature 3 t c -40, +150 ?c note: 1 current limit for long term, reliable operation. 2 refer to the application note on soldering at www.cree.com/rf/document-library 3 measured for the CGH25120F at p diss = 56 w. electrical characteristics (t c = 25?c) characteristics symbol min. typ. max. units conditions dc characteristics 1 gate threshold voltage v gs(th) -3.8 -3.0 -2.3 v dc v ds = 10 v, i d = 28.8 ma gate quiescent voltage v gs(q) C -2.7 C v dc v ds = 28 v, i d = 0.5 a saturated drain current 2 i ds 23.2 28.0 C a v ds = 6.0 v, v gs = 2.0 v drain-source breakdown voltage v br 120 C C v dc v gs = -8 v, i d = 28.8 ma rf characteristics (t c = 25 ? c, f 0 = 2.5 ghz unless otherwise noted) saturated output power 3,4,5 p sat C 130 C w v dd = 28 v, i dq = 0.5 a, pulsed drain effciency 3,5 C 60 C % v dd = 28 v, i dq = 0.5 a, p out = p sat gain 6 g 10.5 12.5 C db v dd = 28 v, i dq = 0.5 a, p out = 43 dbm wimax linearity 6,7 aclr C -31 -27 dbc v dd = 28 v, i dq = 0.5 a, p out = 43 dbm drain effciency 6 27 32 C % v dd = 28 v, i dq = 0.5 a, p out = 43 dbm output mismatch stress vswr C C 10 : 1 y no damage at all phase angles, v dd = 28 v, i dq = 1.0 a, p out = 20 w cw dynamic characteristics input capacitance 8 c gs C 88 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz output capacitance 8 c ds C 12 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz feedback capacitance c gd C 1.6 C pf v ds = 28 v, v gs = -8 v, f = 1 mhz notes: 1 measured on wafer prior to packaging. 2 scaled from pcm data. 3 pulse width = 40 s, duty cycle = 5 %. 4 p sat is defned as i g = 10 ma peak. 5 measured in CGH25120F-amp 6 equivalent 802.16e wimax signal, 10 mhz bandwidth, par = 9.6 db @ 0.01% probability on ccdf. 7 measured over 10 mhz bandwidth at 10 mhz offset from carrier edge. 8 includes package and internal matching components. CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
3 typical performance gain and input return loss vs frequency of CGH25120F in broadband amplifer circuit v dd = 28 v, i dq = 0.5 a typical mobile wimax digital pre-distortion (dpd) performance wimax characteristics with and without dpd correction aclr and drain effciency vs output power measured in CGH25120F-amp amplifer circuit. v ds = 28 v, i ds = 0.5 a, frequency = 2.5 ghz -10 -5 0 12 15 18 r etu r n l o ss ( d b ) l i n ear gai n ( d b ) sparameters of CGH25120F -30 -25 -20 -15 0 3 6 9 2.0 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 3.0 r etu r n l o ss ( d b ) l i n ear gai n ( d b ) frequency (ghz) gain return loss 30 35 40 45 50 -40 -35 -30 -25 -20 d r ai n ef f i ci en cy ( % ) a c l r ( d b c) CGH25120F wimax transfer with and without dpd correction vds = 28v, ids = 500 ma, frequency = 2.5 ghz uncorrected -aclr uncorrected +aclr corrected -aclr corrected +aclr uncorrected eff corrected eff 0 5 10 15 20 25 -70 -65 -60 -55 -50 -45 15 20 25 30 35 40 45 d r ai n ef f i ci en cy ( % ) a c l r ( d b c) output power (dbm) CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
4 typical pulse performance typical pulse characteristics output power, drain effciency, and gain vs input power measured in CGH25120F-amp amplifer circuit. v ds = 28 v, i ds = 0.5 a, freq = 2.5 ghz, pulse width = 40 s , duty cycle = 5 % typical pulsed saturated power vs frequency measured in CGH25120F-amp amplifer circuit. v ds = 28 v, i ds = 0.5 a, p sat = 10 ma i gs peak, pulse width = 40 s , duty cycle = 5 % 72 76 80 51 52 53 d r ai n ef f i ci en cy ( % ) sat u r ated ou t p u t po w er ( d b m) cgh25120 pulsed saturated output power vs frequency psat drain efficiency 56 60 64 68 47 48 49 50 2.1 2.2 2.3 2.4 2.5 2.6 2.7 2.8 2.9 d r ai n ef f i ci en cy ( % ) sat u r ated ou t p u t po w er ( d b m) frequency (ghz) 14 15 16 17 18 40 50 60 70 80 gai n ( d b ) ou t p u t po w er ( d b m) d r ai n ef i i ci en cy ( % ) output power drain efficiency gain 10 11 12 13 14 0 10 20 30 40 0 5 10 15 20 25 30 35 40 gai n ( d b ) ou t p u t po w er ( d b m) d r ai n ef i i ci en cy ( % ) input power (dbm) gain effciency output power CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
5 typical performance simulated maximum available gain and k factor of the CGH25120F v dd = 28 v, i dq = 500 ma typical noise performance simulated minimum noise figure and noise resistance vs frequency of the CGH25120F v dd = 28 v, i dq = 500 ma electrostatic discharge (esd) classifcations parameter symbol class test methodology human body model hbm 1a (> 250 v) jedec jesd22 a114-d charge device model cdm ii (200 < 500 v) jedec jesd22 c101-c CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
6 source and load impedances frequency (mhz) z source z load 2300 6.80 - j12.19 4.38 - j1.42 2350 6.42 - j11.89 4.39 - j1.36 2400 6.05 - j11.61 4.39 - j1.33 2450 5.71 - j11.34 4.36 - j1.32 2500 5.37 - j11.08 4.31 - j1.33 2550 5.04 - j10.83 4.23 - j1.34 2600 4.71 - j10.57 4.11 - j1.36 2650 4.39 - j10.31 3.98 - j1.37 2700 4.07 - j10.04 3.80 - j1.36 note 1 : v dd = 28v, i dq = 500ma. in the 440162 package. note 2 : impedances are extracted from CGH25120F-amp demonstration circuit and are not source and load pull data derived from transistor. CGH25120F power dissipation de-rating curve note 1. area exceeds maximum case operating temperature (see page 2). d z source z load g s CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
7 CGH25120F-amp demonstration amplifer circuit bill of materials designator description qty r1 res, 1/16 w, 0603, 1%, 150 ohms 1 r2 res, 1/16 w, 0603, 1%, 5.1 ohms 1 c1 cap, 6.8 pf, +/-0.25 pf, 0603, atc600s 1 c2 cap, 27 pf, +/-5%, 0603, atc600s 1 c3,c9,c15 cap, 8.2 pf, +/-0.25 pf, 0603, atc600s 3 c4,c10 cap, 82.0 pf, +/-5%, 0603, atc600s 2 c5,c11 cap, 470 pf, 5%, 100v, 0603, x7r 2 c6,c12,c16 cap, 33000 pf, 0805, 100v, x7r 3 c7 cap, 10 uf, 16v, tantalum 1 c8 cap, 24 pf, +/-5%, 0603, atc600s 1 c13,c17 cap, 1.0 uf, 100v, 10%, x7r, 1210 2 c14 cap, 100 uf, +/-20%, 160v, electrolytic 1 j1,j2 conn, n-type, female, 0.500 sma flange 2 j3 conn, header, rt> plz, 0.1 cen, lk, 9 pos 1 - pcb, ro4350, er = 3.48, h = 20 mil 1 - CGH25120F 1 CGH25120F-amp demonstration amplifer circuit CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
8 CGH25120F-amp demonstration amplifer circuit schematic CGH25120F-amp demonstration amplifer circuit outline CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
9 typical package s-parameters for cgh25120 (small signal, v ds = 28 v, i dq = 500 ma, angle in degrees) frequency mag s11 ang s11 mag s21 ang s21 mag s12 ang s12 mag s22 ang s22 500 mhz 0.970 179.55 3.23 65.19 0.006 -19.55 0.697 -171.85 600 mhz 0.969 178.04 2.71 59.73 0.006 -23.92 0.712 -171.11 700 mhz 0.969 176.68 2.35 54.43 0.006 -28.13 0.728 -170.54 800 mhz 0.968 175.39 2.08 49.24 0.006 -32.20 0.744 -170.15 900 mhz 0.967 174.12 1.88 44.13 0.006 -36.17 0.760 -169.90 1.0 ghz 0.965 172.86 1.73 39.07 0.006 -40.07 0.776 -169.80 1.1 ghz 0.963 171.57 1.62 34.02 0.007 -43.93 0.792 -169.82 1.2 ghz 0.961 170.24 1.53 28.94 0.007 -47.79 0.808 -169.93 1.3 ghz 0.957 168.86 1.47 23.78 0.007 -51.71 0.823 -170.13 1.4 ghz 0.953 167.39 1.43 18.47 0.007 -55.72 0.838 -170.41 1.5 ghz 0.948 165.84 1.41 12.95 0.007 -59.92 0.853 -170.74 1.6 ghz 0.941 164.19 1.40 7.11 0.008 -64.38 0.868 -171.14 1.7 ghz 0.932 162.42 1.41 0.85 0.008 -69.21 0.882 -171.61 1.8 ghz 0.921 160.54 1.44 -5.98 0.009 -74.56 0.897 -172.16 1.9 ghz 0.906 158.55 1.49 -13.54 0.009 -80.57 0.912 -172.82 2.0 ghz 0.887 156.51 1.54 -22.02 0.010 -87.43 0.928 -173.62 2.1 ghz 0.863 154.51 1.61 -31.62 0.011 -95.34 0.943 -174.61 2.2 ghz 0.836 152.72 1.68 -42.48 0.012 -104.43 0.956 -175.83 2.3 ghz 0.807 151.32 1.73 -54.61 0.012 -114.71 0.966 -177.27 2.4 ghz 0.782 150.41 1.76 -67.78 0.013 -125.92 0.970 -178.85 2.5 ghz 0.767 149.70 1.74 -81.50 0.013 -137.58 0.968 179.58 2.6 ghz 0.765 148.57 1.69 -95.15 0.013 -149.05 0.960 178.22 2.7 ghz 0.772 146.34 1.61 -108.22 0.012 -159.82 0.948 177.17 2.8 ghz 0.784 142.57 1.52 -120.49 0.012 -169.67 0.937 176.41 2.9 ghz 0.795 137.00 1.43 -132.07 0.012 -178.68 0.926 175.88 3.0 ghz 0.802 129.35 1.37 -143.26 0.011 172.84 0.918 175.48 3.2 ghz 0.800 105.38 1.29 -166.46 0.011 155.52 0.907 174.80 3.4 ghz 0.786 62.35 1.25 164.88 0.011 133.38 0.901 174.02 3.6 ghz 0.824 -2.68 1.08 128.15 0.010 103.76 0.897 172.96 3.8 ghz 0.913 -61.31 0.73 93.46 0.007 76.68 0.890 171.72 4.0 ghz 0.963 -96.70 0.45 69.63 0.005 60.78 0.881 170.41 4.2 ghz 0.983 -116.99 0.29 53.87 0.003 53.02 0.872 168.93 4.4 ghz 0.992 -129.53 0.19 42.45 0.002 49.41 0.860 167.19 4.6 ghz 0.995 -137.94 0.14 33.27 0.002 47.62 0.844 165.11 4.8 ghz 0.997 -143.97 0.10 25.19 0.002 46.36 0.823 162.61 5.0 ghz 0.998 -148.50 0.08 17.50 0.001 44.82 0.793 159.54 5.2 ghz 0.999 -152.04 0.07 9.61 0.001 42.41 0.751 155.74 5.4 ghz 0.999 -154.90 0.06 0.93 0.001 38.57 0.688 150.96 5.6 ghz 0.999 -157.26 0.05 -9.20 0.001 32.67 0.594 145.02 5.8 ghz 0.999 -159.26 0.04 -21.62 0.001 23.98 0.453 138.33 6.0 ghz 1.000 -160.97 0.04 -36.99 0.001 11.87 0.251 136.18 to download the s-parameters in s2p format, go to the CGH25120F product page and click on the documentation tab. CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
10 product dimensions CGH25120F (package type 440162) CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
11 product ordering information order number description unit of measure image CGH25120F gan hemt each CGH25120F-tb test board without gan hemt each CGH25120F-amp test board with gan hemt installed each CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.
12 disclaimer specifcations are subject to change without notice. cree, inc. believes the information contained within this data sheet to be accurate and reliable. however, no responsibility is assumed by cree for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of cree. cree makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose. typical parameters are the average values expected by cree in large quantities and are provided for information purposes only. these values can and do vary in different applications and actual performance can vary over time. all operating parameters should be validated by customers technical experts for each application. cree products are not designed, intended or authorized for use as components in applications intended for surgical implant into the body or to support or sustain life, in applications in which the failure of the cree product could result in personal injury or death or in applications for planning, construction, maintenance or dir ect operation of a nuclear facility. for more information, please contact: cree, inc. 4600 silicon drive durham, north carolina, usa 27703 www.cree.com/rf sarah miller marketing cree, rf components 1.919.407.5302 ryan baker marketing & sales cree, rf components 1.919.407.7816 tom dekker sales director cree, rf components 1.919.407.5639 CGH25120F rev 3.1 cree, inc. 4600 silicon drive durham, north carolina, usa 27703 usa tel: +1.919.313.5300 fax: +1.919.869.2733 www.cree.com/rf copyright ? 2009-2015 cree, inc. all rights reserved. the information in this document is subject to change without notice. cree and the cree logo are registered trademarks of cree, inc.

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